au.\*:("KAMISAKO K")
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PULSED PHOTOCONDUCTION IN POLY-GAMMA -ETHYL-D-GLUTAMATE FILMSYATSUHASHI K; KAMISAKO K; SASABE H et al.1977; REP. PROGR. POLYM. PHYS. JAP.; JPN; DA. 1977; VOL. 20; PP. 625-628; BIBL. 2 REF.Article
ELECTRICAL CONDUCTION OF POLYSTYRENE FILMS.KAMISAKO K; AKIYAMA S; SHINOHARA K et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 11; PP. 1780-1786; BIBL. 15 REF.Article
PHOTOCONDUCTIVE PROPERTIES OF POLYMETHACRYLONITRILEKAMISAKO K; IRINO H; SASABE H et al.1977; REP. PROGR. POLYM. PHYS. JAP.; JPN; DA. 1977; VOL. 20; PP. 359-362; BIBL. 1 REF.Article
Minority-carrier trapping in Ga-doped multicrystalline Si wafersDHAMRIN, M; SCHMIGA, C; KAMISAKO, K et al.Solar energy materials and solar cells. 2006, Vol 90, Num 18-19, pp 3179-3186, issn 0927-0248, 8 p.Conference Paper
Doping properties of microcrystalline silicon prepared by mercury sensitized photochemical vapor depositionSUZUKI, K; KUROIWA, K; KAMISAKO, K et al.Applied physics. A, Solids and surfaces. 1990, Vol 50, Num 2, pp 227-231, issn 0721-7250Article
Influence of film thickness on structural properties of microcrystalline silicon filmsYOSHIOKA, Y; MATSUYAMA, Y; KAMISAKO, K et al.sans titre. 2002, pp 1266-1269, isbn 0-7803-7471-1, 4 p.Conference Paper
Etching and surface modification of GaAs by hydrogen radicals generated by hydrogen microwave afterglow microwave afterglow methodNAGAYOSHI, H; YAMAMOTO, Y; KAMISAKO, K et al.Japanese journal of applied physics. 1996, Vol 35, Num 4A, pp L451-L454, issn 0021-4922, 2Article
Gas phase reaction kinetics in mercury-photosensitized decomposition of SiH4KAMISAKO, K; IMAI, T; TARUI, Y et al.Japanese journal of applied physics. 1988, Vol 27, Num 6, pp 1092-1095, issn 0021-4922, 1Article
High-rate selective etching of a-Si:H using hydrogen radicalsNAGAYOSHI, H; YAMAGUCHI, M; KAMISAKO, K et al.Japanese journal of applied physics. 1994, Vol 33, Num 5A, pp L621-L623, issn 0021-4922, 2Article
IR absorption spectroscopic identification of electroactive and electroinactive polyaniline films prepared by the electrochemical polymerization of anilineOHSAKA, T; OHNUKI, Y; OYAMA, N et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1984, Vol 161, Num 2, pp 399-405, issn 0022-0728Article
Substrate dependence of crystlliization of silicon films prepared by hydrogen radical CVD methodKIMURA, K; SHIRASAWA, T; KOBAYASHI, N et al.sans titre. 2002, pp 1270-1273, isbn 0-7803-7471-1, 4 p.Conference Paper
High-density vacuum ultraviolet light source in windowless photochemical vapor deposition reactor and its application to a-Si:H depositionKUROIWA, K; YAMAZAKI, H; TSUCHIYA, S et al.Japanese journal of applied physics. 1992, Vol 31, Num 4B, pp L518-L520, issn 0021-4922, 2Article
Investigation on leakage current reduction of photo-CVD tantalum oxide films accomplished by active oxygen annealingTANIMOTO, S; MATSUI, M; KAMISAKO, K et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 1, pp 321-328, issn 0013-4651Article
Tantalum oxide films formed by UV photo-CVD using ozone and TaCl5TANIMOTO, S; MATSUI, M; AOYAGI, M et al.Japanese journal of applied physics. 1991, Vol 30, Num 3, pp L330-L333, issn 0021-4922, p.AArticle
Passivation property of SiNX:H/SiO2 double layer formed by ammonia microwave remote plasma CVD methodFUSHIMI, Y; WAKE, T; FUJIWARA, M et al.sans titre. 2002, pp 375-378, isbn 0-7803-7471-1, 4 p.Conference Paper
SiNx:H/SiO2 double-layer passivation with hydrogen-radical annealing for solar cellsNAGAYOSHI, H; IKEDA, M; YAMAGUCHI, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 9A, pp 5688-5692, issn 0021-4922, 1Article
Compensation effect of donor and acceptor impurities co-doping on the electrical properties of directionally solidified multicrystalline silicon ingotsDHAMRIN, M; SAITOH, T; YAMAGA, I et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 773-775, issn 0022-0248, 3 p.Conference Paper
Effect of hydrogen-radical annealing for SiO2 passivationNAGAYOSHI, H; ONOZAWA, Y; IKEDA, M et al.Japanese journal of applied physics. 1996, Vol 35, Num 8B, pp L1047-L1049, issn 0021-4922, 2Article
Effect of high temperature steam annealing for SiO2 passivationABE, Y; NAGAYOSHI, H; KAWABA, T et al.Solar energy materials and solar cells. 2001, Vol 65, Num 1-4, pp 607-612, issn 0927-0248Conference Paper
Modification effect of a-Si1-xNx:H surface by hydrogen radicalsYAMAGUCHI, M; NAGAYOSHI, H; IKEDA, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 791-795, issn 0021-4922, 1Conference Paper
